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| STP8NM50 STP8NM50FP N-channel 550V @ Tjmax - 0.7 - 8A - TO-220 - TO-220FP MDmeshTM Power MOSFET General features Type STP8NM50 STP8NM50FP VDSS (@Tjmax) 550V 550V RDS(on) <0.8 <0.8 ID 8A 8A (1) 3 1 2 1. Limited only by maximum temperature allowed 3 1 2 100% avalanche tested High dv/dt and avalanche capabilities Low gate input resistance Low input capacitance and gate charge TO-220 TO-220FP Description The MDmeshTM is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company's PowerMESHTM horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products. Internal schematic diagram Applications Switching application Order codes Part number STP8NM50 STP8NM50FP Marking P8NM50 P8NM50FP Package TO-220 TO-220FP Packaging Tube Tube October 2006 Rev 7 1/14 www.st.com 14 Contents STP8NM50 - STP8NM50FP Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 4 5 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 STP8NM50 - STP8NM50FP Electrical ratings 1 Electrical ratings Table 1. Symbol VGS ID ID IDM (2) Absolute maximum ratings Value Parameter TO-220 Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor 8 5 32 100 0.8 15 --65 to 150 2500 30 8 (1) Unit TO-220FP V A A A W W/C V/ns V C 5 (1) 32 (1) PTOT dv/dt(3) VISO Tj Tstg 25 Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25C) Operating junction temperature Storage temperature 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD 8 A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX. Table 2. Symbol Rthj-case Rthj-amb Tl Thermal data Parameter Thermal resistance junction-case max Thermal resistance junction-amb max Maximum lead temperature for soldering purpose TO-220 1.25 62.5 300 TO-220FP 5 Unit C/W C/W C Table 3. Symbol IAR EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj=25C, ID=IAR, VDD= 50V) Max value 2.5 200 Unit A mJ 3/14 Electrical characteristics STP8NM50 - STP8NM50FP 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250A, VGS= 0 VDS = Max rating, VDS = Max rating @125C VGS = 30 V VDS= VGS, ID = 250 A VGS= 10 V, ID= 2.5A 3 4 0.7 Min. 500 1 10 100 Typ. Max. Unit V A A nA V 5 0.8 Table 5. Symbol gfs (1) Ciss Coss Crss Coss eq.(2) Qg Qgs Qgd RG Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent ouput capacitance Total gate charge Gate-source charge Gate-drain charge Gate input resistance Test conditions VDS > ID(on) x RDS(on)max, ID= 2.5A Min. Typ. 2.4 415 88 12 50 13 4 6 3 Max. Unit S pF pF pF pF nC nC nC VDS =25V, f=1 MHz, VGS=0 VGS=0, VDS =0V to 400V VDD=400V, ID = 5A VGS =10V (see Figure 16) f=1MHz Gate DC Bias = 0 Test signal level = 20mV Open drain 1. Pulsed: pulse duration=300s, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/14 STP8NM50 - STP8NM50FP Electrical characteristics Table 6. Symbol td(on) tr tr(Voff) tf tc Switching times Parameter Turn-on delay time Rise time Off-voltage rise time Fall time Cross-over time Test conditions VDD=250 V, ID=2.5A, RG=4.7, VGS=10V (see Figure 15) VDD=400 V, ID=5A, RG=4.7, VGS=10V (see Figure 15) Min Typ 16 8 14 6 13 Max Unit ns ns ns ns ns Table 7. Symbol ISD ISDM VSD trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD=10A, VGS=0 ISD=5A, di/dt = 100A/s, VDD=100 V, Tj=25C (see Figure 20) ISD=5A, di/dt = 100A/s, VDD=100 V, Tj=150C (see Figure 20) 185 1.1 11.5 270 1.6 12 Test conditions Min Typ Max 8 32 1.5 Unit A A V ns C A ns C A 5/14 Electrical characteristics STP8NM50 - STP8NM50FP 2.1 Figure 1. Electrical characteristics (curves) Safe operating area for TO-220 Figure 2. Thermal impedance for TO-220 Figure 3. Safe operating area for TO-220FP Figure 4. Safe operating area for TO-220FP Figure 5. Output characteristics Figure 6. Transfer characteristics 6/14 STP8NM50 - STP8NM50FP Figure 7. Transconductance Figure 8. Electrical characteristics Static drain-source on resistance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Normalized gate threshold voltage vs temperature Figure 12. Normalized on resistance vs temperature 7/14 Electrical characteristics Figure 13. Source-drain diode forward characteristics STP8NM50 - STP8NM50FP Figure 14. Normalized BVDSS vs temperature 8/14 STP8NM50 - STP8NM50FP Test circuit 3 Test circuit Figure 16. Gate charge test circuit Figure 15. Switching times test circuit for resistive load Figure 17. Test circuit for inductive load Figure 18. Unclamped Inductive load test switching and diode recovery times circuit Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform 9/14 Package mechanical data STP8NM50 - STP8NM50FP 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/14 STP8NM50 - STP8NM50FP Package mechanical data TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 oP Q 11/14 Package mechanical data STP8NM50 - STP8NM50FP TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O A B L3 L6 L7 F1 F D G1 H F2 L2 L5 E 123 L4 12/14 G STP8NM50 - STP8NM50FP Revision history 5 Revision history Table 8. Date 09-Sep-2004 11-Aug-2006 22-Sep-2006 18-Oct-2006 Revision history Revision 4 5 6 7 Title changed New template Some value change in Table 4: On/off states Updated Note 3 on page 3 Changes 13/14 STP8NM50 - STP8NM50FP Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14 |
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